Infineon IPA60R N-Channel MOSFET, 31 A, 1.2 kV Enhancement, 3-Pin TO-220 IPA60R099P7XKSA1

RS-stocknr.:: 222-4874
Fabrikantnummer:: IPA60R099P7XKSA1
Fabrikant:: Infineon

Infineon IPA60R N-Channel MOSFET, 31 A, 1.2 kV Enhancement, 3-Pin TO-220 IPA60R099P7XKSA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 tube van 50 eenheden)*

€ 171,55

(excl. BTW)

€ 207,60

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 09 maart 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per tube*
50 - 50	€ 3,431	€ 171,55
100 - 200	€ 3,156	€ 157,80
250 +	€ 2,985	€ 149,25

*prijsindicatie

RS-stocknr.:: 222-4874
Fabrikantnummer:: IPA60R099P7XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	1.2kV
	Series	IPA60R
	Package Type	TO-220
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	29W
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 1.2kV
	Series IPA60R
	Package Type TO-220
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 29W
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA60R099P7XKSA1

Infineon IPA60R Series MOSFET, 1200V Maximum Drain Source Voltage, 31A Maximum Continuous Drain Current - IPA60R099P7XKSA1

This MOSFET is a high-voltage switching transistor designed for N-channel enhancement-mode applications in power electronics. It operates across a wide temperature range and is supplied in a TO-220 package for surface mounting, offering a practical solution where high drain-source voltage handling and moderate continuous current are required.

Features and Benefits:

• 1200 V drain-source capability enables high-voltage switching
• 31 A continuous drain current supports substantial load currents
• 99 mΩ RDS(on) minimises conduction losses during operation
• 29 W power dissipation allows sustained thermal loading
• 30 V gate-source limit permits robust gate drive margins
• −55 °C to +150 °C operating range ensures wide temperature tolerance

Applications

• Suitable for industrial high-voltage switch circuits
• Ideal for power converters handling elevated voltages
• Used for motor drive stages requiring N-channel switching
• Can be used for inverter output stage designs
• Suitable for laboratory evaluation of high-voltage transistors

What package should I expect for mounting on a heatsink?

It is supplied in a TO-220 package suitable for mounting to heatsinks and surface attachment.

What gate voltage limits must I observe for reliable operation?

The maximum permissible gate-to-source voltage is 30 V, so drive voltages should remain within this value.

How does thermal stress affect continuous current capability?

The maximum continuous drain current is rated at 31 A and must be managed with appropriate cooling to remain within the 29 W power dissipation limit.

What environmental temperatures can it tolerate during operation?

The device can operate between −55 °C and +150 °C, accommodating a broad range of ambient and elevated conditions.