Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN

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Subtotaal (1 rol van 4000 eenheden)*

€ 1.380,00

(excl. BTW)

€ 1.668,00

(incl. BTW)

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RS-stocknr.:
220-7485
Fabrikantnummer:
IRFH7932TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.4W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

6.1mm

Standards/Approvals

RoHS

Height

1mm

Width

5.1 mm

Automotive Standard

No

The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Very low RDS(ON) at 4.5V VGS

Low Gate Charge

Fully Characterized Avalanche Voltage and

Current

100% Tested for RG

Lead-Free (Qualified up to 260°C Reflow)

RoHS compliant (Halogen Free)

Low Thermal Resistance

Large Source Lead for more reliable Soldering

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