Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 90 A, 40 V Enhancement, 8-Pin TDSON IPC90N04S53R6ATMA1
- RS-stocknr.:
- 220-7402
- Fabrikantnummer:
- IPC90N04S53R6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 15 eenheden)*
€ 13,395
(excl. BTW)
€ 16,215
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 3.645 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 0,893 | € 13,40 |
| 75 - 135 | € 0,849 | € 12,74 |
| 150 - 360 | € 0,813 | € 12,20 |
| 375 - 735 | € 0,776 | € 11,64 |
| 750 + | € 0,723 | € 10,85 |
*prijsindicatie
- RS-stocknr.:
- 220-7402
- Fabrikantnummer:
- IPC90N04S53R6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24.5nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.58mm | |
| Length | 5.25mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24.5nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.58mm | ||
Length 5.25mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6mΩ.The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.
OptiMOS™ - power MOSFET for automotive applications
N-channel - Enhancement mode - Logic Level
MSL1 up to 260°C peak reflow
175°C operating temperature
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