Infineon OptiMOS Type N-Channel MOSFET & Diode, 16 A, 300 V Enhancement, 8-Pin TDSON BSC13DN30NSFDATMA1
- RS-stocknr.:
- 220-7357
- Fabrikantnummer:
- BSC13DN30NSFDATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,10
(excl. BTW)
€ 7,40
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3.655 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 1,22 | € 6,10 |
*prijsindicatie
- RS-stocknr.:
- 220-7357
- Fabrikantnummer:
- BSC13DN30NSFDATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon OptiMOS Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
Improved hard commutation ruggedness
Optimized hard switching behaviour
Industry’s lowest R ds(on), Q g and Q rr
RoHS compliant - halogen free
Highest system reliability
System cost reduction
Highest efficiency and power density
Easy-to-design products
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET & Diode, 16 A, 300 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode, 137 A, 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode, 137 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSTATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 100 A, 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 205 A, 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 90 A, 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1