Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251 IPS60R3K4CEAKMA1

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RS-stocknr.:
217-2577
Fabrikantnummer:
IPS60R3K4CEAKMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-251

Series

CoolMOS CE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.4Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.7nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Maximum Operating Temperature

150°C

Width

2.4 mm

Length

6.73mm

Standards/Approvals

No

Height

9.82mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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