Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-220 IPA60R360P7SXKSA1

RS-stocknr.:: 215-2480
Fabrikantnummer:: IPA60R360P7SXKSA1
Fabrikant:: Infineon

Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin TO-220 IPA60R360P7SXKSA1

Subtotaal (1 verpakking van 20 eenheden)*

€ 15,44

(excl. BTW)

€ 18,68

(incl. BTW)

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Plus verzending 3.620 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per verpakking*
20 +	€ 0,772	€ 15,44

*prijsindicatie

RS-stocknr.:: 215-2480
Fabrikantnummer:: IPA60R360P7SXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	600V CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	22W
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series 600V CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 22W
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA60R360P7SXKSA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 9A Continuous Drain Current - IPA60R360P7SXKSA1

This MOSFET is a high-voltage switching transistor designed for power-conversion roles in demanding electronic systems. It operates across a wide temperature span and is built for through-hole mounting in conventional assembly workflows, providing a compact solution for circuits that require a robust N-channel enhancement device with a high drain-to-source voltage rating.

Features and Benefits:

• 600V drain tolerance enables high-voltage switching applications
• 9A continuous drain current supports medium-power loads
• 360mΩ Rds(on) reduces conduction losses at operating current
• 22W power dissipation allows sustained thermal loading
• 13nC typical gate charge ensures efficient drive requirements
• 0.9V forward voltage minimises diode conduction drop

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion topologies
• Used for hard‑switching in inverter stages
• Can be used for mains-side power factor correction
• Used with heat-sinked assemblies in power modules

What package and mounting method does it use?

It is supplied in a TO-220 package and intended for through-hole mounting to provide secure mechanical and thermal connection.

What gate and thermal limits must a designer observe?

The gate may be driven up to 20V relative to source and the device should be cooled to handle up to 22W dissipation within its operating temperature range.

What temperature range can it tolerate during operation?

It is rated to operate across a low of -55°C up to a high of 150°C for a wide variety of thermal environments.

What conduction mode and channel type are provided?

The component is an N-channel enhancement-mode device suited to standard transistor switching topologies.