Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1
- RS-stocknr.:
- 214-4414
- Fabrikantnummer:
- IPP60R060P7XKSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 5 eenheden)*
€ 28,68
(excl. BTW)
€ 34,705
(incl. BTW)
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- Plus verzending 485 stuk(s) vanaf 10 augustus 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 5,736 | € 28,68 |
*prijsindicatie
- RS-stocknr.:
- 214-4414
- Fabrikantnummer:
- IPP60R060P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Power Dissipation Pd | 164W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Power Dissipation Pd 164W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 4.4mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - IPP60R060P7XKSA1
This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and switching applications. It operates across a wide temperature span and is intended for through-hole mounting in a TO-220 format, providing a compact, serviceable option for engineers needing a robust device for high-voltage circuits.
Features and Benefits:
• 600V rating enabling high-voltage switching applications
• 48A continuous drain current supporting heavy load handling
• 164W maximum power dissipation for high-power operation
• 60 mΩ maximum RDS(on) delivering low conduction losses
• 67 nC typical gate charge allowing predictable drive requirements
• 20V maximum gate-source voltage accommodating standard gate drivers
• 48A continuous drain current supporting heavy load handling
• 164W maximum power dissipation for high-power operation
• 60 mΩ maximum RDS(on) delivering low conduction losses
• 67 nC typical gate charge allowing predictable drive requirements
• 20V maximum gate-source voltage accommodating standard gate drivers
Applications
• Suitable for SMPS primary-side switching stages
• Ideal for industrial motor-drive inverter stages
• Used with high-voltage battery management systems
• Can be used for power-factor correction pre-regulators
• Useful in LED lighting mains-supply conversion
• Ideal for industrial motor-drive inverter stages
• Used with high-voltage battery management systems
• Can be used for power-factor correction pre-regulators
• Useful in LED lighting mains-supply conversion
What thermal range can it tolerate during operation?
It is specified to operate from -55 °C up to 150 °C, covering harsh ambient and elevated junction conditions for demanding environments.
What package and mounting method are provided for board assembly?
It is supplied in a TO-220 package designed for through-hole installation, facilitating heatsinking and straightforward soldered mounting.
How does the devices gate drive requirement affect driver selection?
With a typical gate charge of 67 nC and a 20V VGS limit, choose a driver capable of sourcing and sinking sufficient current while not exceeding the gate-voltage limit.
Which conduction and switching characteristics influence efficiency?
The maximum drain-source resistance of 60 mΩ and forward voltage of 0.9V indicate its conduction losses and forward drop characteristics under load, relevant when calculating system efficiency.
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