Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1

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RS-stocknr.:
214-4414
Fabrikantnummer:
IPP60R060P7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

600V CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

67nC

Maximum Power Dissipation Pd

164W

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Height

4.4mm

Length

10.2mm

Standards/Approvals

No

Automotive Standard

No

Infineon 600V CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - IPP60R060P7XKSA1


This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and switching applications. It operates across a wide temperature span and is intended for through-hole mounting in a TO-220 format, providing a compact, serviceable option for engineers needing a robust device for high-voltage circuits.

Features and Benefits:


• 600V rating enabling high-voltage switching applications
• 48A continuous drain current supporting heavy load handling
• 164W maximum power dissipation for high-power operation
• 60 mΩ maximum RDS(on) delivering low conduction losses
• 67 nC typical gate charge allowing predictable drive requirements
• 20V maximum gate-source voltage accommodating standard gate drivers

Applications


• Suitable for SMPS primary-side switching stages
• Ideal for industrial motor-drive inverter stages
• Used with high-voltage battery management systems
• Can be used for power-factor correction pre-regulators
• Useful in LED lighting mains-supply conversion

What thermal range can it tolerate during operation?


It is specified to operate from -55 °C up to 150 °C, covering harsh ambient and elevated junction conditions for demanding environments.

What package and mounting method are provided for board assembly?


It is supplied in a TO-220 package designed for through-hole installation, facilitating heatsinking and straightforward soldered mounting.

How does the device’s gate drive requirement affect driver selection?


With a typical gate charge of 67 nC and a 20V VGS limit, choose a driver capable of sourcing and sinking sufficient current while not exceeding the gate-voltage limit.

Which conduction and switching characteristics influence efficiency?


The maximum drain-source resistance of 60 mΩ and forward voltage of 0.9V indicate its conduction losses and forward drop characteristics under load, relevant when calculating system efficiency.

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