Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59

RS-stocknr.:: 215-2468
Fabrikantnummer:: BSR315PH6327XTSA1
Fabrikant:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59

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€ 522,00

(excl. BTW)

€ 633,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Verzending vanaf 30 november 2026

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Aantal stuks	Per stuk	Per rol*
3000 - 3000	€ 0,174	€ 522,00
6000 - 6000	€ 0,17	€ 510,00
9000 +	€ 0,165	€ 495,00

*prijsindicatie

RS-stocknr.:: 215-2468
Fabrikantnummer:: BSR315PH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	620mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SC-59
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	0.5W
	Typical Gate Charge Qg @ Vgs	6nC
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 620mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SC-59
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 0.5W
	Typical Gate Charge Qg @ Vgs 6nC
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSR315PH6327XTSA1

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 620mA Maximum Continuous Drain Current - BSR315PH6327XTSA1

This MOSFET is a P‑channel enhancement device designed for switching and signal control in compact surface‑mount assemblies. It operates across a wide temperature range and is intended for applications requiring modest continuous current handling and low power loss in a small SC‑59 package. The component is suitable where a low gate‑charge switching element and straightforward gate‑drive capability are required.

Features and Benefits:

• 60V maximum drain voltage enables higher-voltage switching
• 800mΩ Rds(on) reduces conduction losses at low currents
• 0.62A continuous drain current supports small‑signal loads
• 6nC typical gate charge enables faster switching transitions
• 0.5W power dissipation suits low‑power surface‑mount designs
• -55°C to 150°C rating for extended temperature environments

Applications

• Used for low‑voltage battery protection circuits
• Suitable for portable device power‑path switching
• Ideal for signal‑level polarity control in modules
• Can be used for small motor‑drive gate stages
• Used with thermal‑management‑limited SMD assemblies

What gate‑drive limitations should I consider?

The gate may be driven up to ±20V relative to the source, so ensure gate‑drive circuitry stays within this voltage range.

How does the thermal environment affect continuous current handling?

The 0.5W dissipation limit constrains current under high ambient temperatures

adequate PCB thermal relief or derating is required to maintain 0.62A continuous current.

What are the mounting considerations for assembly?

It is supplied in an SC‑59 surface‑mount package with three pins, so standard SMD reflow profiles and the correct land‑pattern design are recommended.

Is this device suited for automotive specification programmes?

It is not classified to automotive standards and should not be specified where automotive‑grade certification is mandated.