Infineon OptiMOS Type N-Channel MOSFET, 95 A, 80 V Enhancement, 8-Pin SuperSO

RS-stocknr.:: 215-2460
Fabrikantnummer:: BSC052N08NS5ATMA1
Fabrikant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 95 A, 80 V Enhancement, 8-Pin SuperSO

Subtotaal (1 rol van 5000 eenheden)*

€ 3.720,00

(excl. BTW)

€ 4.500,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 19 oktober 2026

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Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,744	€ 3.720,00

*prijsindicatie

RS-stocknr.:: 215-2460
Fabrikantnummer:: BSC052N08NS5ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	95A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS
	Package Type	SuperSO
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	32nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	83W
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 95A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS
	Package Type SuperSO
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 32nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 83W
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC052N08NS5ATMA1

Infineon OptiMOS Series MOSFET, 80V Maximum Drain Source Voltage, 95A Maximum Continuous Drain Current - BSC052N08NS5ATMA1

This MOSFET is a surface-mount N-channel enhancement-mode transistor designed for high-current switching in power electronics. It is intended for applications requiring efficient conduction and fast switching across a wide ambient range, and is supplied in an 8-pin SuperSO package suitable for compact board layouts.

Features and Benefits:

• Very low on-resistance 5.2mΩ enabling reduced conduction losses
• High continuous drain current 95A permitting elevated load handling
• 80V drain-source rating supporting medium-voltage designs
• 83W maximum power dissipation allowing sustained thermal load
• Typical gate charge 32nC for faster switching transitions
• Gate-source tolerance 20V to accommodate robust drive voltages

Applications

• Suitable for high-efficiency DC-DC converters in power rails
• Ideal for synchronous rectification in power-supply stages
• Used for motor-drive half-bridge and inverter switching
• Can be used for server and telecoms power-distribution modules
• Employed in industrial switching where a wide temperature range is required

What temperature extremes can the device tolerate during operation?

It is specified to operate from -55°C up to 150°C, allowing use in demanding thermal environments.

Which mounting method and package should I allow for on the board?

The device is supplied as a surface-mounted 8-pin SuperSO package, so the layout should accommodate the thermal pad and SMD land pattern.

How does the transistor behave when driven with stronger gate voltages?

The gate-source maximum is 20V

within that limit higher drive voltages reduce RDS(on) and improve conduction performance.

What switching characteristic impacts layout for high-frequency designs?

A typical gate charge of 32nC determines gate-drive energy and influences drive circuitry and EMI mitigation strategies.