Infineon OptiMOS Type N-Channel MOSFET, 98 A, 40 V Enhancement, 8-Pin SuperSO

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€ 1.620,00

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€ 1.960,00

(incl. BTW)

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RS-stocknr.:
215-2455
Fabrikantnummer:
BSC032N04LSATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

98A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

SuperSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 98A Maximum Continuous Drain Current - BSC032N04LSATMA1


This MOSFET is a high-current N-channel transistor designed for surface-mounted power switching and conversion in demanding electronic systems. It operates across a wide ambient range and suits applications requiring low conduction losses and significant continuous current handling within a compact SuperSO package.

Features and Benefits:


• Very low on-resistance of 4.4 mΩ for reduced conduction losses
• 98A continuous drain capability for heavy-current loads
• 40V drain-to-source rating for mid-voltage power stages
• 52W maximum power dissipation for thermal headroom
• Typical gate charge 25 nC enabling efficient gate drive
• Operates from -55 °C to 175 °C for extended temperature tolerance

Applications


• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in power management
• Used for motor-drive stages requiring surface-mount parts
• Can be used for telecom and server power distribution
• Suited to battery-powered systems needing low Vf switching

What gate-drive considerations are required for efficient switching?


Drive circuitry should deliver sufficient peak current to charge the 25 nC gate rapidly while controlling switching slew to balance switching loss and EMI.

How should thermal management be approached on the PCB?


Use multi-layer copper planes and thermal vias beneath the SuperSO footprint to spread 52W dissipation and lower junction-to-board thermal resistance.

What electrical stresses must the device withstand during transient events?


The device is rated to 40V Vds steady-state

transient protection such as snubbers or transient voltage suppression should be applied to limit voltage overshoot beyond this level.

Are there specific layout practices for minimising conduction loss?


Place wide, short copper traces for drain and source connections and minimise loop inductance between the device and its gate drive to preserve the low 4.4 mΩ advantage.

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