Infineon StrongIRFET Type N-Channel MOSFET, 360 A, 40 V Enhancement, 7-Pin TO-263 IRF40SC240ARMA1
- RS-stocknr.:
- 214-9123
- Fabrikantnummer:
- IRF40SC240ARMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 21,57
(excl. BTW)
€ 26,10
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.990 stuk(s) vanaf 20 februari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 4,314 | € 21,57 |
| 25 - 45 | € 3,666 | € 18,33 |
| 50 - 120 | € 3,41 | € 17,05 |
| 125 - 245 | € 3,19 | € 15,95 |
| 250 + | € 2,934 | € 14,67 |
*prijsindicatie
- RS-stocknr.:
- 214-9123
- Fabrikantnummer:
- IRF40SC240ARMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | StrongIRFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 366nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 417W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.45 mm | |
| Length | 10.2mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series StrongIRFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 366nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 417W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.45 mm | ||
Length 10.2mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon’s latest 40 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications. It offers design flexibility, with Industry standard packaging. It is capable of providing immunity to false turn-on in noisy environments.
It has 175°C operating temperature
High current carrying capability
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