Infineon StrongIRFET N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-262
- RS-stocknr.:
- 215-2602
- Fabrikantnummer:
- IRFSL4410ZPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 74,65
(excl. BTW)
€ 90,35
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Laatste voorraad RS
- Laatste 150 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 1,493 | € 74,65 |
| 100 - 200 | € 1,39 | € 69,50 |
| 250 - 450 | € 1,354 | € 67,70 |
| 500 - 950 | € 1,319 | € 65,95 |
| 1000 + | € 1,286 | € 64,30 |
*prijsindicatie
- RS-stocknr.:
- 215-2602
- Fabrikantnummer:
- IRFSL4410ZPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-262 | |
| Series | StrongIRFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-262 | ||
Series StrongIRFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. It has applications such us high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard through-hole power package
High-current rating
Gerelateerde Links
- Infineon StrongIRFET N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-262 IRFSL4410ZPBF
- Infineon StrongIRFET N-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-220
- Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220
- Infineon StrongIRFET N-Channel MOSFET, 69 A, 250 V Enhancement, 3-Pin TO-247 IRF250P225
- Infineon StrongIRFET N-Channel MOSFET, 100 A, 300 V Enhancement, 3-Pin TO-247 IRF300P226
- Infineon StrongIRFET N-Channel MOSFET, 360 A, 40 V Enhancement, 7-Pin TO-263 IRF40SC240ARMA1
- Infineon StrongIRFET N-Channel MOSFET, 483 A, 100 V Enhancement, 3-Pin TO-247 IRF100P218XKMA1
- Infineon StrongIRFET N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 3-Pin ISOMETRIC IRF6613TRPBF