Infineon Dual OptiMOS-T2 2 Type N-Channel Power Transistor, 16 A, 100 V Enhancement, 8-Pin TDSON IPG16N10S461AATMA1
- RS-stocknr.:
- 214-9058
- Fabrikantnummer:
- IPG16N10S461AATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 19,50
(excl. BTW)
€ 23,60
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 8.660 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,975 | € 19,50 |
| 100 - 180 | € 0,761 | € 15,22 |
| 200 - 480 | € 0,712 | € 14,24 |
| 500 - 980 | € 0,664 | € 13,28 |
| 1000 + | € 0,614 | € 12,28 |
*prijsindicatie
- RS-stocknr.:
- 214-9058
- Fabrikantnummer:
- IPG16N10S461AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 61mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 61mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1mm | ||
Width 5.9 mm | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Normal Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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