Infineon Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin TDSON
- RS-stocknr.:
- 214-9059
- Fabrikantnummer:
- IPG20N04S4L08AATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 1.985,00
(excl. BTW)
€ 2.400,00
(incl. BTW)
Voeg 5000 eenheden toe voor gratis bezorging
Laatste voorraad RS
- Laatste 5.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,397 | € 1.985,00 |
*prijsindicatie
- RS-stocknr.:
- 214-9059
- Fabrikantnummer:
- IPG20N04S4L08AATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-T2 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 54W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Enhancement Mode | |
| Width | 5.9 mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-T2 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 54W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Enhancement Mode | ||
Width 5.9 mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS Compliant | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon range of new OptiMOS -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS -T2 product family extends the existing families of OptiMOS -T and OptiMOS. The Dual N-channel Logic Level - Enhancement mode, are feasible for automatic optical inspection (AOI). OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
The product is AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
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