Infineon OptiMOS N-Channel MOSFET, 147 A, 25 V Enhancement, 8-Pin TDSON BSC015NE2LS5IATMA1
- RS-stocknr.:
- 214-8972
- Fabrikantnummer:
- BSC015NE2LS5IATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 15 eenheden)*
€ 19,97
(excl. BTW)
€ 24,17
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending 4.995 stuk(s) vanaf 23 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 1,331 | € 19,97 |
| 75 - 135 | € 1,263 | € 18,95 |
| 150 - 360 | € 1,211 | € 18,17 |
| 375 - 735 | € 1,157 | € 17,36 |
| 750 + | € 1,077 | € 16,16 |
*prijsindicatie
- RS-stocknr.:
- 214-8972
- Fabrikantnummer:
- BSC015NE2LS5IATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 147A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | 650mV | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 147A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf 650mV | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Width 6.35mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 50W Maximum Power Dissipation, 25V Maximum Drain Source Voltage - BSC015NE2LS5IATMA1
This MOSFET is a high-current N‑channel enhancement device designed for surface-mount power switching and load control in demanding thermal environments. It operates across a wide temperature span and is specified for significant continuous drain current and power handling, making it suitable for applications that require low conduction losses and Rapid gate-driven switching.
Features and Benefits:
• 1.5mΩ Rds(on) reduces conduction losses at high currents
• 147A continuous drain current supports heavy load currents
• 50W power dissipation enables sustained power handling
• 22nC typical gate charge allows efficient switching control
• 0.65V forward voltage minimises voltage drop under load
• 25V drain‑source rating suits low‑voltage power rails
• 147A continuous drain current supports heavy load currents
• 50W power dissipation enables sustained power handling
• 22nC typical gate charge allows efficient switching control
• 0.65V forward voltage minimises voltage drop under load
• 25V drain‑source rating suits low‑voltage power rails
Applications
• Suitable for high‑current DC-DC converters
• Ideal for synchronous rectification in power supplies
• Used for motor drive stages in power electronics
• Can be used for battery protection and distribution
• Appropriate for power switching in Compact SMD assemblies
• Ideal for synchronous rectification in power supplies
• Used for motor drive stages in power electronics
• Can be used for battery protection and distribution
• Appropriate for power switching in Compact SMD assemblies
What package and mounting style does it use?
It is supplied in an 8‑pin TDSON package intended for surface-mount assembly.
What voltage limits should be observed during circuit design?
The maximum drain‑source voltage is 25V and maximum gate‑source voltage is 16V.
How does it perform across temperature extremes?
It is specified to operate from −55°C up to 150°C for an extended thermal range.
What channel type and mode are implemented?
The device is an N‑channel enhancement‑mode MOSFET.
What physical footprint constraints are relevant for PCB layout?
The package measures approximately 5.49mm by 6.35mm with a height of 1.1mm.
Gerelateerde Links
- Infineon OptiMOS N-Channel MOSFET, 147 A, 25 V Enhancement, 8-Pin TDSON BSC015NE2LS5IATMA1
- Infineon OptiMOS N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- Infineon OptiMOS N-Channel MOSFET, 13 A, 34 V Enhancement, 8-Pin TDSON BSC0996NSATMA1
- Infineon OptiMOS N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin TDSON IAUC100N10S5N040ATMA1
- Infineon OptiMOS N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC014N04LSATMA1
- Infineon OptiMOS N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin TDSON BSC010NE2LSATMA1
- Infineon OptiMOS N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC011N03LSATMA1