Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-252 IPD70R360P7SAUMA1
- RS-stocknr.:
- 214-4392
- Fabrikantnummer:
- IPD70R360P7SAUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 9,50
(excl. BTW)
€ 11,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.140 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,475 | € 9,50 |
| 100 - 180 | € 0,371 | € 7,42 |
| 200 - 480 | € 0,347 | € 6,94 |
| 500 - 980 | € 0,323 | € 6,46 |
| 1000 + | € 0,304 | € 6,08 |
*prijsindicatie
- RS-stocknr.:
- 214-4392
- Fabrikantnummer:
- IPD70R360P7SAUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | 700V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 59.5W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.65mm | |
| Width | 6.42 mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series 700V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 59.5W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.65mm | ||
Width 6.42 mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
The Infineon 700V Cool MOS P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains.
It supports less magnetic size with lower BOM costs
It has high ESD ruggedness
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