Vishay SQJ142ELP N-Channel MOSFET, 175 A, 40 V Enhancement, 4-Pin SO-8 SQJ142ELP-T1_GE3
- RS-stocknr.:
- 210-5033
- Fabrikantnummer:
- SQJ142ELP-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 11,18
(excl. BTW)
€ 13,53
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 juli 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,118 | € 11,18 |
| 100 - 240 | € 1,062 | € 10,62 |
| 250 - 490 | € 0,806 | € 8,06 |
| 500 - 990 | € 0,727 | € 7,27 |
| 1000 + | € 0,616 | € 6,16 |
*prijsindicatie
- RS-stocknr.:
- 210-5033
- Fabrikantnummer:
- SQJ142ELP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 175A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQJ142ELP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.26mm | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 175A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQJ142ELP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.26mm | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type with 175 A drain current.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Gerelateerde Links
- Vishay SQJ142ELP N-Channel MOSFET, 175 A, 40 V Enhancement, 4-Pin SO-8 SQJ142ELP-T1_GE3
- Vishay SQJ146ELP N-Channel MOSFET, 88 A, 40 V Enhancement, 4-Pin SO-8 SQJ146ELP-T1_GE3
- Vishay SQJ142EP N-Channel MOSFET, 167 A, 40 V Enhancement, 4-Pin SO-8 SQJ142EP-T1_GE3
- Vishay SQJ144EP N-Channel MOSFET, 130 A, 40 V Enhancement, 4-Pin SO-8 SQJ144EP-T1_GE3
- Vishay SQJ140EP N-Channel MOSFET, 266 A, 40 V Enhancement, 4-Pin SO-8 SQJ140EP-T1_GE3
- Vishay SQJ138EP N-Channel MOSFET, 330 A, 40 V Enhancement, 4-Pin SO-8 SQJ138EP-T1_GE3
- Vishay SQJ152ELP N-Channel MOSFET, 123 A, 40 V Enhancement, 4-Pin SO-8 SQJ152ELP-T1_GE3
- Vishay SQJ150EP N-Channel MOSFET, 66 A, 40 V Enhancement, 4-Pin SO-8 SQJ150EP-T1_GE3