Vishay SQJ146ELP N-Channel MOSFET, 88 A, 40 V Enhancement, 4-Pin SO-8 SQJ146ELP-T1_GE3
- RS-stocknr.:
- 210-5039
- Fabrikantnummer:
- SQJ146ELP-T1_GE3
- Fabrikant:
- Vishay
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 210-5039
- Fabrikantnummer:
- SQJ146ELP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Series | SQJ146ELP | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 88 A | |
| Maximum Drain Source Voltage (Vds) | 40 V | |
| Channel Mode | Enhancement | |
| Pin Count | 4 | |
| Package Type | SO-8 | |
| Automotive Standard | AEC-Q101 | |
| Forward Voltage (Vf) | 1.1 V | |
| Height | 1.1 mm | |
| Length | 5 mm | |
| Maximum Drain Source Resistance (Rds) | 4.3 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 75 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 23 nC | |
| Width | 6.25 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Series SQJ146ELP | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 88 A | ||
Maximum Drain Source Voltage (Vds) 40 V | ||
Channel Mode Enhancement | ||
Pin Count 4 | ||
Package Type SO-8 | ||
Automotive Standard AEC-Q101 | ||
Forward Voltage (Vf) 1.1 V | ||
Height 1.1 mm | ||
Length 5 mm | ||
Maximum Drain Source Resistance (Rds) 4.3 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 75 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 23 nC | ||
Width 6.25 mm | ||
The Vishay Automotive N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type with 88 A drain current.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
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