Vishay SiR882BDP N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8 SiR882BDP-T1-RE3
- RS-stocknr.:
- 210-5006
- Fabrikantnummer:
- SiR882BDP-T1-RE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 2.301,00
(excl. BTW)
€ 2.784,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 09 november 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,767 | € 2.301,00 |
*prijsindicatie
- RS-stocknr.:
- 210-5006
- Fabrikantnummer:
- SiR882BDP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR882BDP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83.3W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Width | 5.26mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR882BDP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83.3W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Width 5.26mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8 package type.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Gerelateerde Links
- Vishay SiR882BDP N-Channel MOSFET, 67.5 A, 100 V Enhancement, 8-Pin SO-8 SiR882BDP-T1-RE3
- Vishay N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3
- Vishay SiR680LDP N-Channel MOSFET, 130 A, 80 V Enhancement, 8-Pin SO-8 SIR680LDP-T1-RE3
- Vishay SiR826LDP N-Channel MOSFET, 86 A, 80 V Enhancement, 8-Pin SO-8 SiR826LDP-T1-RE3
- Vishay SiR180ADP N-Channel MOSFET, 137 A, 60 V Enhancement, 8-Pin SO-8 SiR180ADP-T1-RE3
- Vishay SiDR626LDP N-Channel MOSFET, 204 A, 60 V Enhancement, 8-Pin SO-8 SiDR626LDP-T1-RE3
- Vishay SiDR104ADP N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiDR104ADP-T1-RE3
- Vishay SiR104LDP N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR104LDP-T1-RE3