Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3

RS-stocknr.:: 210-4972
Fabrikantnummer:: SIHB17N80AE-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-263 SIHB17N80AE-GE3

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€ 11,76

(excl. BTW)

€ 14,23

(incl. BTW)

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RS-stocknr.:: 210-4972
Fabrikantnummer:: SIHB17N80AE-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	179W
	Typical Gate Charge Qg @ Vgs	41nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	4.06mm
	Length	14.61mm
	Width	9.65mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 179W
	Typical Gate Charge Qg @ Vgs 41nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 4.06mm
	Length 14.61mm
	Width 9.65mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHB17N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 15A Continuous Drain Current - SIHB17N80AE-GE3

This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion duties in surface-mount applications. It operates across a wide temperature range and is intended for use where robust high-voltage switching, moderate current handling and compact SMD packaging are required.

Features and Benefits:

• 800V maximum drain-source voltage enabling high-voltage switching
• 15A continuous drain current for moderate load handling
• 250mΩ Rds(on) minimises conduction losses under load
• 179W power dissipation supports high-power operation
• 41nC typical gate charge for predictable switching behaviour
• 30V maximum gate-source voltage ensures gate drive margin

Applications

• Suitable for SMPS primary-side high-voltage switching
• Ideal for industrial high-voltage power stages
• Used with boost converters requiring 800V devices
• Can be used for power-factor correction front ends

What thermal extremes can this device withstand in operation?

It is specified to operate from -55°C up to 150°C, allowing use in environments with large temperature variations.

What package and mounting style should I plan for on the board?

The device is supplied in a TO-263 package intended for surface mounting to heatsinking areas on the board.

How many electrical connections does it present for layout considerations?

The component has three pins, corresponding to the gate, drain and source terminations for PCB routing.

What is the channel mode and how does it affect switching?

The transistor is an enhancement-mode N-channel device, requiring a positive gate drive relative to the source to switch on.