Toshiba TK099V65Z Type N-Channel MOSFET, 30 A, 650 V Enhancement, 5-Pin DFN
- RS-stocknr.:
- 206-9729
- Fabrikantnummer:
- TK099V65Z,LQ(S
- Fabrikant:
- Toshiba
Subtotaal (1 rol van 2500 eenheden)*
€ 10.960,00
(excl. BTW)
€ 13.262,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 22 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 4,384 | € 10.960,00 |
*prijsindicatie
- RS-stocknr.:
- 206-9729
- Fabrikantnummer:
- TK099V65Z,LQ(S
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | TK099V65Z | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | -1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Height | 0.5mm | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series TK099V65Z | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf -1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Height 0.5mm | ||
Width 8 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba silicon N-channel MOSFET having high-speed switching properties with lower capacitance. It is mainly used in switching power supplies.
Low drain-source on-resistance 0.08 ?
Storage temperature -55 to 150°C
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