Toshiba U-MOSVIII-H Type N-Channel MOSFET, 15 A, 40 V Enhancement, 3-Pin TO-252 TK15S04N1L,LQ(O
- RS-stocknr.:
- 133-2798
- Fabrikantnummer:
- TK15S04N1L,LQ(O
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 4,64
(excl. BTW)
€ 5,615
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 0,928 | € 4,64 |
| 25 - 45 | € 0,786 | € 3,93 |
| 50 - 245 | € 0,762 | € 3,81 |
| 250 - 495 | € 0,738 | € 3,69 |
| 500 + | € 0,712 | € 3,56 |
*prijsindicatie
- RS-stocknr.:
- 133-2798
- Fabrikantnummer:
- TK15S04N1L,LQ(O
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | U-MOSVIII-H | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 46W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Width | 5.5 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series U-MOSVIII-H | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 46W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Width 5.5 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- JP
MOSFET Transistors, Toshiba
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