onsemi NTMJS1D0N04C Type N-Channel MOSFET, 300 A, 40 V Enhancement, 8-Pin LFPAK NTMJS1D0N04CTWG
- RS-stocknr.:
- 189-0506
- Fabrikantnummer:
- NTMJS1D0N04CTWG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,36
(excl. BTW)
€ 14,955
(incl. BTW)
Voeg 35 eenheden toe voor gratis bezorging
Tijdelijk niet op voorraad
- Verzending vanaf 10 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,472 | € 12,36 |
| 50 - 95 | € 2,132 | € 10,66 |
| 100 + | € 1,848 | € 9,24 |
*prijsindicatie
- RS-stocknr.:
- 189-0506
- Fabrikantnummer:
- NTMJS1D0N04CTWG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NTMJS1D0N04C | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 920μΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 166W | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Length | 5mm | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NTMJS1D0N04C | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 920μΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 166W | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Length 5mm | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK-E Package, Industry Standard
These Devices are Pb-Free
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