onsemi NTMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK

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RS-stocknr.:
195-2532
Fabrikantnummer:
NTMYS011N04CTWG
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

40V

Series

NTMYS011N04C

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

28W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.9nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.25 mm

Height

1.15mm

Length

5mm

Automotive Standard

No

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

These Devices are Pb−Free

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