onsemi NTMYS1D2N04CL Type N-Channel MOSFET, 258 A, 40 V Enhancement, 8-Pin LFPAK NTMYS1D2N04CLTWG
- RS-stocknr.:
- 189-0351
- Fabrikantnummer:
- NTMYS1D2N04CLTWG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 13,63
(excl. BTW)
€ 16,49
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Verzending vanaf 31 augustus 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,726 | € 13,63 |
| 50 - 95 | € 2,35 | € 11,75 |
| 100 + | € 2,038 | € 10,19 |
*prijsindicatie
- RS-stocknr.:
- 189-0351
- Fabrikantnummer:
- NTMYS1D2N04CLTWG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 258A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMYS1D2N04CL | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 109nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 134W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 258A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMYS1D2N04CL | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 109nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 134W | ||
Maximum Operating Temperature 175°C | ||
Width 4.9mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.2mm | ||
Automotive Standard No | ||
Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.
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