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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	200A
	Maximum Drain Source Voltage Vds	40V
	Series	NVMJS1D5N04CL
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	70nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	5mm
	Width	4.9 mm
	Height	1.15mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 200A
	Maximum Drain Source Voltage Vds 40V
	Series NVMJS1D5N04CL
	Package Type LFPAK
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 70nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 5mm
	Width 4.9 mm
	Height 1.15mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVMJS1D5N04CLTWG

Automotive Power MOSFET in a 5x6mm flat lead, dual cool package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK8 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMJS1D5N04CL Type N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin LFPAK

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