Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die
- RS-stocknr.:
- 188-5065
- Fabrikantnummer:
- SQUN702E-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 19,20
(excl. BTW)
€ 23,25
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 40 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,84 | € 19,20 |
| 25 - 45 | € 3,264 | € 16,32 |
| 50 - 120 | € 3,072 | € 15,36 |
| 125 - 245 | € 2,884 | € 14,42 |
| 250 + | € 2,688 | € 13,44 |
*prijsindicatie
- RS-stocknr.:
- 188-5065
- Fabrikantnummer:
- SQUN702E-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | Triple Die | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.79V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Common Drain | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 3 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type Triple Die | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.79V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Common Drain | ||
Standards/Approvals No | ||
Number of Elements per Chip 3 | ||
Automotive Standard AEC-Q101 | ||
Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET.
Optimized triple die package
TrenchFET® power MOSFET
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