Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

RS-stocknr.:: 188-4925
Fabrikantnummer:: SQUN702E-T1_GE3
Fabrikant:: Vishay

Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

Subtotaal (1 rol van 2000 eenheden)*

€ 3.552,00

(excl. BTW)

€ 4.298,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 21 december 2026

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Aantal stuks	Per stuk	Per rol*
2000 +	€ 1,776	€ 3.552,00

*prijsindicatie

RS-stocknr.:: 188-4925
Fabrikantnummer:: SQUN702E-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	200V
	Package Type	Triple Die
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	10
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	0.79V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	60W
	Typical Gate Charge Qg @ Vgs	23nC
	Transistor Configuration	Common Drain
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Number of Elements per Chip	3
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 200V
	Package Type Triple Die
	Series TrenchFET
	Mount Type Surface
	Pin Count 10
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 0.79V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 60W
	Typical Gate Charge Qg @ Vgs 23nC
	Transistor Configuration Common Drain
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Number of Elements per Chip 3
	Automotive Standard AEC-Q101

Datasheet SQUN702E-T1_GE3

Vishay TrenchFET Series MOSFET, 200V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - SQUN702E-T1_GE3

This MOSFET is a surface-mount power transistor family designed for high-voltage switching in automotive and industrial control systems. It combines both P- and N-channel elements in a common-drain triple-die configuration to support complex power-management topologies while operating across a wide temperature range suitable for demanding environments.

Features and Benefits:

• 200V drain rating enabling high-voltage switching applications • 30A continuous drain current supporting substantial load currents • 60W power dissipation for sustained high-power operation • 175°C maximum operating temperature allowing elevated thermal margins • 20V gate tolerance accommodating standard gate-drive voltages • 23nC typical gate charge permitting predictable switching performance

Applications

• Suitable for automotive power distribution and motor-drive circuits • Ideal for high-voltage DC-DC conversion stages in vehicles • Used for switch-mode power supplies in industrial automation • Can be used for load-switching and protection in electrical systems • Used with multi-element topologies requiring combined P and N channels

What thermal environment can it withstand for extended operation?

It is rated to function up to 175°C, with a lower ambient limit of -55°C for cold-start scenarios.

How does the device accommodate mixed-channel circuit designs?

The triple-die, common-drain configuration integrates P- and N-channel elements in a single package to simplify layout in complementary switching arrangements.

What mounting considerations apply for PCB assembly?

It is supplied as a surface-mount component in a 10-pin package, enabling automated assembly and Compact board placement.

What electrical limits should designers respect for gate and drain terminals?

The maximum gate-source voltage is 20V and the maximum drain-source voltage is 200V to prevent device overstress.