Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

RS-stocknr.:: 188-4925
Fabrikantnummer:: SQUN702E-T1_GE3
Fabrikant:: Vishay

Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die

Subtotaal (1 rol van 2000 eenheden)*

€ 3.552,00

(excl. BTW)

€ 4.298,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 01 februari 2027

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Aantal stuks	Per stuk	Per rol*
2000 +	€ 1,776	€ 3.552,00

*prijsindicatie

RS-stocknr.:: 188-4925
Fabrikantnummer:: SQUN702E-T1_GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	200V
	Package Type	Triple Die
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	10
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	23nC
	Maximum Power Dissipation Pd	60W
	Forward Voltage Vf	0.79V
	Maximum Operating Temperature	+175°C
	Transistor Configuration	Common Drain
	Standards/Approvals	No
	Number of Elements per Chip	3
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 200V
	Package Type Triple Die
	Series TrenchFET
	Mount Type Surface
	Pin Count 10
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 23nC
	Maximum Power Dissipation Pd 60W
	Forward Voltage Vf 0.79V
	Maximum Operating Temperature +175°C
	Transistor Configuration Common Drain
	Standards/Approvals No
	Number of Elements per Chip 3
	Automotive Standard AEC-Q101

Datasheet SQUN702E-T1_GE3

Vishay TrenchFET Series MOSFET, 200V Drain Source Voltage, 30A Continuous Drain Current - SQUN702E-T1_GE3

This MOSFET is a surface-mount transistor device designed for power switching in demanding environments. It employs a triple-die topology in a common-drain configuration to handle elevated voltages and currents while supporting both P-channel and N-channel enhancement modes for flexible circuit integration.

Features and Benefits:

• 200V drain rating enables high-voltage switching capability
• 30A continuous drain current supports heavy load handling
• 60W dissipation permits sustained power delivery
• 20V gate tolerance allows robust gate-drive margin
• 23 nC typical gate charge yields predictable switching energy
• +175 °C maximum operation suits high-temperature use cases

Applications

• Suitable for automotive power distribution modules
• Used for high-voltage DC-DC conversion stages
• Ideal for motor driver half-bridge assemblies
• Can be used for compact surface-mount power supplies
• Used with synchronous rectification circuits for efficiency

What pin configuration does it use for PCB layout?

The device uses a 10-pin package in a common-drain arrangement, allowing specific routing of source and gate connections while keeping the drain common across the triple-die structure.

How does the intrinsic diode perform during conduction?

The body diode exhibits a forward voltage of 0.79V, affecting conduction losses and thermal loading during reverse-recovery events.

Are both channel polarities available on the same component?

The device contains both P-channel and N-channel elements implemented as enhancement-mode transistors to accommodate complementary switching topologies.

What environmental temperature range can it tolerate during operation?

It is specified for operation from -55 °C up to +175 °C, permitting use across a wide thermal span in harsh conditions.