Vishay Dual TrenchFET 2 N-Channel MOSFET, 850 mA, 20 V Enhancement, 6-Pin SOT-363 SQ1922AEEH-T1_GE3
- RS-stocknr.:
- 188-5029
- Fabrikantnummer:
- SQ1922AEEH-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 10,20
(excl. BTW)
€ 12,35
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,408 | € 10,20 |
| 250 - 600 | € 0,40 | € 10,00 |
| 625 - 1225 | € 0,306 | € 7,65 |
| 1250 - 2475 | € 0,24 | € 6,00 |
| 2500 + | € 0,183 | € 4,58 |
*prijsindicatie
- RS-stocknr.:
- 188-5029
- Fabrikantnummer:
- SQ1922AEEH-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 850mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 530mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 850mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 530mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 1.5W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Width 1.35mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET.
TrenchFET® power MOSFET
Gerelateerde Links
- Vishay Dual TrenchFET 2 N-Channel MOSFET, 850 mA, 20 V Enhancement, 6-Pin SOT-363 SQ1922AEEH-T1_GE3
- Vishay TrenchFET N-Channel MOSFET, 363 A, 60 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ160ER-T1_GE3
- Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3
- Vishay Dual TrenchFET 2 N-Channel MOSFET, 30 A, 40 V Enhancement, 4-Pin SO-8 SQJ912DEP-T1_GE3
- Vishay Dual TrenchFET 2 N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- Vishay Dual TrenchFET 2 N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- Vishay Siliconix Dual TrenchFET 2 N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS966ENW-T1_GE3
- Vishay Siliconix Dual TrenchFET 2 N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SQS944ENW-T1_GE3