Vishay E Type N-Channel Power MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3
- RS-stocknr.:
- 188-4970
- Fabrikantnummer:
- SIHA100N60E-GE3
- Fabrikant:
- Vishay
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,15
(excl. BTW)
€ 12,282
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
- 996 stuk(s) klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 5,075 | € 10,15 |
| 20 - 48 | € 4,57 | € 9,14 |
| 50 - 98 | € 4,33 | € 8,66 |
| 100 - 198 | € 4,06 | € 8,12 |
| 200 + | € 3,81 | € 7,62 |
*prijsindicatie
- RS-stocknr.:
- 188-4970
- Fabrikantnummer:
- SIHA100N60E-GE3
- Fabrikant:
- Vishay
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.3mm | |
| Length | 10.3mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 15.3mm | ||
Length 10.3mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SIHA100N60E-GE3
Features and Benefits:
• 12A continuous drain current supports moderate load currents
• 0.1Ω Rds(on) reduces conduction losses during operation
• 33nC typical gate charge allows predictable switching behaviour
• 35W power dissipation permits substantial thermal load handling
• 150°C maximum operating temperature supports elevated-temperature use
Applications
• Ideal for switch-mode power supplies handling elevated voltages
• Used for industrial inverter and converter switching elements
• Can be used for relay and contactor driver circuits in control panels
What mounting method is required for reliable installation?
How does gate voltage range affect control circuitry design?
What environmental temperature extremes can it tolerate during operation?
Are there regulatory or material considerations for disposal or reuse?
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