Vishay E Type N-Channel Power MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

RS-stocknr.:: 188-4870
Fabrikantnummer:: SIHA100N60E-GE3
Fabrikant:: Vishay

Vishay E Type N-Channel Power MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 SIHA100N60E-GE3

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Subtotaal (1 tube van 50 eenheden)*

€ 126,70

(excl. BTW)

€ 153,30

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 950 stuk(s) vanaf 10 augustus 2026

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 2,534	€ 126,70
100 - 200	€ 2,382	€ 119,10
250 +	€ 2,154	€ 107,70

*prijsindicatie

RS-stocknr.:: 188-4870
Fabrikantnummer:: SIHA100N60E-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	33nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	35W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	15.3mm
	Length	10.3mm
	Width	4.7mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 33nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 35W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 15.3mm
	Length 10.3mm
	Width 4.7mm
	Automotive Standard No

Datasheet SIHA100N60E-GE3

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SIHA100N60E-GE3

This power MOSFET is a high-voltage N‑channel enhancement device designed for switch and power-conversion duties in through‑hole assemblies. It operates across a broad temperature range suited to demanding environments and is intended for applications requiring substantial drain current and elevated drain‑to‑source voltage handling while using a TO‑220 package for conventional mounting.

Features and Benefits:

• 600V drain capability enables high-voltage switching applications
• 12A continuous drain current supports substantial load currents
• 0.1Ω Rds(on) reduces conduction losses in power circuits
• 35W dissipation allows sustained power handling in ambient cooling
• 33nC typical gate charge permits controlled gate drive energy
• 30V maximum gate drive ensures robust gate overdrive margin

Applications

• Suitable for mains‑linked switch‑mode power supplies
• Ideal for high-voltage motor inverter stages
• Used with discrete boost converter topologies
• Can be used for industrial battery charging systems
• Suitable for power-factor correction front ends

What are the thermal limits for continuous use?

The device can operate between -55°C and 150°C, enabling deployment in both low-temperature and high-temperature environments with appropriate thermal management.

Which packaging and mounting approach does it use?

It is supplied in a TO‑220 case intended for through‑hole mounting, facilitating heatsink attachment and reliable mechanical fixation.

What gate-drive constraints must be observed?

The gate‑to‑source voltage must not exceed 30V, so gate drivers should be selected to keep Vgs within this limit during switching transients.

How does the forward voltage affect circuit design?

With a forward voltage of 1.2V, designers should account for this drop when calculating conduction losses and thermal loading in series or synchronous configurations.