Vishay Common Drain TrenchFET Gen IV 2 N-Channel Power MOSFET, 60 A, 25 V Enhancement, 8-Pin PowerPAK 1212
- RS-stocknr.:
- 188-4890
- Fabrikantnummer:
- SISF02DN-T1-GE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 188-4890
- Fabrikantnummer:
- SISF02DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Gate Source Voltage Vgs | -12V, +16V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69.4W | |
| Transistor Configuration | Common Drain | |
| Maximum Operating Temperature | +150°C | |
| Width | 3.4mm | |
| Standards/Approvals | No | |
| Height | 0.75mm | |
| Length | 3.4mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Gate Source Voltage Vgs -12V, +16V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69.4W | ||
Transistor Configuration Common Drain | ||
Maximum Operating Temperature +150°C | ||
Width 3.4mm | ||
Standards/Approvals No | ||
Height 0.75mm | ||
Length 3.4mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low source-to-source on resistance
Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package
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