Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3

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€ 10,65

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€ 12,875

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  • Plus verzending 100 stuk(s) vanaf 05 januari 2026
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Verpakkingsopties
RS-stocknr.:
180-7738
Fabrikantnummer:
SI2307CDS-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

138mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.1nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.14W

Maximum Operating Temperature

150°C

Length

3.04mm

Standards/Approvals

No

Width

2.64 mm

Height

1.12mm

Automotive Standard

No

Land van herkomst:
CN

Vishay MOSFET


The Vishay surface mount dual P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 88mohm at a gate-source voltage of 10V. It has continuous drain current of 3.5A and a maximum power rating of 1.8W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

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