Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23
- RS-stocknr.:
- 165-7181
- Fabrikantnummer:
- SI2337DS-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.278,00
(excl. BTW)
€ 1.545,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Wordt opgeheven
- Laatste 15.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,426 | € 1.278,00 |
*prijsindicatie
- RS-stocknr.:
- 165-7181
- Fabrikantnummer:
- SI2337DS-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.303Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.303Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Height 1.02mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23 SI2337DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23