Vishay Type P-Channel MOSFET, 35 A, 40 V, 8-Pin PowerPAK 1212-8 SIS443DN-T1-GE3

RS-stocknr.:: 180-7730
Fabrikantnummer:: SIS443DN-T1-GE3
Fabrikant:: Vishay

Vishay Type P-Channel MOSFET, 35 A, 40 V, 8-Pin PowerPAK 1212-8 SIS443DN-T1-GE3

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 9,12

(excl. BTW)

€ 11,035

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 75,00

Tijdelijk niet op voorraad

Verzending 3.940 stuk(s) vanaf 08 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 1,824	€ 9,12
50 - 120	€ 1,642	€ 8,21
125 - 245	€ 1,272	€ 6,36
250 - 495	€ 1,056	€ 5,28
500 +	€ 0,824	€ 4,12

*prijsindicatie

RS-stocknr.:: 180-7730
Fabrikantnummer:: SIS443DN-T1-GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PowerPAK 1212-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0117Ω
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	41.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	52W
	Maximum Operating Temperature	150°C
	Width	3.61 mm
	Length	3.61mm
	Height	0.79mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 40V
	Package Type PowerPAK 1212-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0117Ω
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 41.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 52W
	Maximum Operating Temperature 150°C
	Width 3.61 mm
	Length 3.61mm
	Height 0.79mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 11.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 35A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• DC/DC converters

• Load switches

• Mobile computing

• Notebook computers

• Power management

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested