Vishay TrenchFET Type N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8

RS-stocknr.:: 180-7296
Fabrikantnummer:: SI4896DY-T1-E3
Fabrikant:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8

Subtotaal (1 rol van 2500 eenheden)*

€ 2.842,50

(excl. BTW)

€ 3.440,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 75,00

Tijdelijk niet op voorraad

Verzending vanaf 26 augustus 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
2500 +	€ 1,137	€ 2.842,50

*prijsindicatie

RS-stocknr.:: 180-7296
Fabrikantnummer:: SI4896DY-T1-E3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.5A
	Maximum Drain Source Voltage Vds	80V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Power Dissipation Pd	1.56W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.2 mm
	Height	1.75mm
	Length	5mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.5A
	Maximum Drain Source Voltage Vds 80V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Power Dissipation Pd 1.56W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.2 mm
	Height 1.75mm
	Length 5mm
	Automotive Standard No

Datasheet

Land van herkomst:: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 16.5mohm at a gate-source voltage of 10V. It has power dissipation of 1.56W and continuous drain current of 6.7A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21