Infineon SIPMOS Type P-Channel MOSFET, 2.9 A, 60 V Enhancement, 4-Pin SOT-223

RS-stocknr.:: 178-5073
Fabrikantnummer:: BSP613PH6327XTSA1
Fabrikant:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 2.9 A, 60 V Enhancement, 4-Pin SOT-223

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 rol van 1000 eenheden)*

€ 506,00

(excl. BTW)

€ 612,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Op voorraad

13.000 stuk(s) klaar voor verzending vanaf een andere locatie

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
1000 - 1000	€ 0,506	€ 506,00
2000 - 2000	€ 0,481	€ 481,00
3000 +	€ 0,462	€ 462,00

*prijsindicatie

RS-stocknr.:: 178-5073
Fabrikantnummer:: BSP613PH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.9A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-223
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	10.8W
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Operating Temperature	175°C
	Height	1.5mm
	Length	40mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.9A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-223
	Series SIPMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 10.8W
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Operating Temperature 175°C
	Height 1.5mm
	Length 40mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

BSP613P, SIPMOS Small-Signal-Transistor

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 2.9A Maximum Continuous Drain Current - BSP613PH6327XTSA1

This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in demanding environments. It delivers controlled gate-driven switching for automotive and industrial systems, offering a combination of moderate current handling and temperature tolerance to support elevated-temperature operation and compact board layouts.

Features and Benefits:

• 60V drain-source rating enables medium-voltage switching
• 2.9A continuous drain current supports steady load delivery
• 130mΩ maximum Rds(on) reduces conduction losses
• 22nC typical gate charge simplifies gate-drive sizing
• 10.8W maximum power dissipation allows sustained power handling
• -55°C to 175°C operating range suits wide temperature extremes

Applications

• Suitable for load switching in automotive electronics
• Ideal for industrial high-temperature control circuits
• Used with compact power regulators on surface-mount designs
• Can be used for polarity and reverse-current protection arrangements
• Used for low-to-moderate current battery management functions

What mounting style is required for assembly?

It uses a SOT-223 4-pin surface-mount package that is compatible with standard SMT reflow processes and common PCB layout footprints.

What gate voltage limits should designers observe?

The maximum permissible gate-to-source voltage is 20V, so gate-drive circuitry must remain within this threshold to avoid device stress.

How does forward voltage affect system design?

The forward voltage of approximately 1.1V informs power-loss calculations during conduction and helps determine thermal management needs in the application.

Is this device suitable for automotive-grade projects?

It meets AEC‑Q101 criteria, making it appropriate for many automotive electronic module implementations.