Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223 BSP171PH6327XTSA1
- RS-stocknr.:
- 167-942
- Artikelnummer Distrelec:
- 304-36-976
- Fabrikantnummer:
- BSP171PH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,98
(excl. BTW)
€ 9,66
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
- Plus verzending 20 stuk(s) vanaf 31 augustus 2026
- Plus verzending 20.030 stuk(s) vanaf 04 september 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,798 | € 7,98 |
| 100 - 240 | € 0,756 | € 7,56 |
| 250 - 490 | € 0,742 | € 7,42 |
| 500 - 990 | € 0,695 | € 6,95 |
| 1000 + | € 0,647 | € 6,47 |
*prijsindicatie
- RS-stocknr.:
- 167-942
- Artikelnummer Distrelec:
- 304-36-976
- Fabrikantnummer:
- BSP171PH6327XTSA1
- Fabrikant:
- Infineon
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5mm | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.5mm | ||
Length 6.5mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1
Features & Benefits
Applications
What is the maximum drain-source voltage this component can handle?
How does this component perform at elevated temperatures?
Can it be used in battery-operated circuits?
What is the significance of the avalanche rating?
How can I ensure proper installation on the PCB?
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