Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin TO-252 SQD40061EL_GE3
- RS-stocknr.:
- 178-3960
- Fabrikantnummer:
- SQD40061EL_GE3
- Fabrikant:
- Vishay Siliconix
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,79
(excl. BTW)
€ 11,85
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 1.560 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,979 | € 9,79 |
*prijsindicatie
- RS-stocknr.:
- 178-3960
- Fabrikantnummer:
- SQD40061EL_GE3
- Fabrikant:
- Vishay Siliconix
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 185nC | |
| Forward Voltage Vf | -1.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.38 mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 185nC | ||
Forward Voltage Vf -1.5V | ||
Maximum Operating Temperature 175°C | ||
Width 2.38 mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
Vrijgesteld
- Land van herkomst:
- TW
TrenchFET® power MOSFET
Package with low thermal resistance
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