Vishay Siliconix TrenchFET Type P-Channel MOSFET, 10 A, 30 V Enhancement, 6-Pin SC-70 SQA403EJ-T1_GE3
- RS-stocknr.:
- 178-3897P
- Fabrikantnummer:
- SQA403EJ-T1_GE3
- Fabrikant:
- Vishay Siliconix
Subtotaal 25 eenheden (geleverd op een doorlopende strip)*
€ 10,525
(excl. BTW)
€ 12,725
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 25 + | € 0,421 |
*prijsindicatie
- RS-stocknr.:
- 178-3897P
- Fabrikantnummer:
- SQA403EJ-T1_GE3
- Fabrikant:
- Vishay Siliconix
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay Siliconix | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13.6W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay Siliconix | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13.6W | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101 | ||
Vrijgesteld
- Land van herkomst:
- CN
TrenchFET® power MOSFET
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