Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8
- RS-stocknr.:
- 178-3895P
- Fabrikantnummer:
- SiR188DP-T1-RE3
- Fabrikant:
- Vishay Siliconix
Subtotaal 10 eenheden (geleverd op een doorlopende strip)*
€ 9,61
(excl. BTW)
€ 11,63
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 1.020 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 10 + | € 0,961 |
*prijsindicatie
- RS-stocknr.:
- 178-3895P
- Fabrikantnummer:
- SiR188DP-T1-RE3
- Fabrikant:
- Vishay Siliconix
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Height 1.07mm | ||
Length 5.99mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Vrijgesteld
- Land van herkomst:
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
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