Vishay TrenchFET N-Channel MOSFET, 14.4 A, 250 V Enhancement, 8-Pin SO-8 Si7190ADP-T1-RE3
- RS-stocknr.:
- 178-3665
- Fabrikantnummer:
- Si7190ADP-T1-RE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 178-3665
- Fabrikantnummer:
- Si7190ADP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.4A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.4A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Length 5.99mm | ||
Automotive Standard No | ||
Vrijgesteld
- Land van herkomst:
- CN
TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package
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