Vishay IRF620 Type N-Channel Power MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-220AB IRF620PBF
- RS-stocknr.:
- 178-0854
- Fabrikantnummer:
- IRF620PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 28,70
(excl. BTW)
€ 34,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 300 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,574 | € 28,70 |
| 100 - 200 | € 0,488 | € 24,40 |
| 250 + | € 0,431 | € 21,55 |
*prijsindicatie
- RS-stocknr.:
- 178-0854
- Fabrikantnummer:
- IRF620PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRF620 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRF620 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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