Vishay IRF Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- RS-stocknr.:
- 281-6028
- Fabrikantnummer:
- IRF840PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,87
(excl. BTW)
€ 9,525
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 195 stuk(s) vanaf 12 januari 2026
- Plus verzending 210 stuk(s) vanaf 12 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,574 | € 7,87 |
| 50 - 95 | € 1,43 | € 7,15 |
| 100 - 245 | € 1,372 | € 6,86 |
| 250 - 495 | € 1,286 | € 6,43 |
| 500 + | € 1,144 | € 5,72 |
*prijsindicatie
- RS-stocknr.:
- 281-6028
- Fabrikantnummer:
- IRF840PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | IRF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series IRF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay power MOSFETs offer fast switching, rugged design and low on-resistance. It is cost-effective.
Repetitive avalanche rated
Fast switching
Ease of paralleling
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