onsemi Single SiC Power Module, 28 A, 3-Pin TO-220 FFSP3065A

RS-stocknr.:: 172-8971
Fabrikantnummer:: FFSP3065A
Fabrikant:: onsemi

onsemi Single SiC Power Module, 28 A, 3-Pin TO-220 FFSP3065A

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 2 eenheden)*

€ 16,79

(excl. BTW)

€ 20,316

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 75,00

Laatste voorraad RS

Laatste 198 stuk(s), klaar voor verzending vanaf een andere locatie

Aantal stuks	Per stuk	Per verpakking*
2 - 8	€ 8,395	€ 16,79
10 - 98	€ 7,24	€ 14,48
100 - 248	€ 6,75	€ 13,50
250 - 498	€ 6,58	€ 13,16
500 +	€ 6,415	€ 12,83

*prijsindicatie

RS-stocknr.:: 172-8971
Fabrikantnummer:: FFSP3065A
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	SiC Power Module
	Maximum Continuous Drain Current Id	28A
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Forward Voltage Vf	2.4V
	Maximum Power Dissipation Pd	240W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Length	10.67mm
	Height	16.51mm
	Width	4.8 mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type SiC Power Module
	Maximum Continuous Drain Current Id 28A
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Forward Voltage Vf 2.4V
	Maximum Power Dissipation Pd 240W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Length 10.67mm
	Height 16.51mm
	Width 4.8 mm
	Standards/Approvals No
	Automotive Standard No

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L

The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.

Features and Benefits

• Avalanche rated 180mJ

• Ease of paralleling

• High surge current capacity

• No reverse recovery/no forward recovery

• Operating temperature ranges between -55°C and 175°C

• Positive temperature coefficient

Applications

• EV charger

• General purpose

• Industrial power

• PFC

• Power switching circuits

• SMPS

• Solar inverter

• UPS

• Welding

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007