Infineon BSC040N08NS5 Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC040N08NS5ATMA1
- RS-stocknr.:
- 171-1969
- Fabrikantnummer:
- BSC040N08NS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 16,56
(excl. BTW)
€ 20,04
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,656 | € 16,56 |
| 50 - 90 | € 1,574 | € 15,74 |
| 100 - 240 | € 1,416 | € 14,16 |
| 250 - 490 | € 1,273 | € 12,73 |
| 500 + | € 1,211 | € 12,11 |
*prijsindicatie
- RS-stocknr.:
- 171-1969
- Fabrikantnummer:
- BSC040N08NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | BSC040N08NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 0.88V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series BSC040N08NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 0.88V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon BSC040N08NS5 OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
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