Infineon BSC070N10NS5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON BSC070N10NS5ATMA1
- RS-stocknr.:
- 171-1963
- Fabrikantnummer:
- BSC070N10NS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 9,65
(excl. BTW)
€ 11,68
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- 4.200 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,965 | € 9,65 |
| 50 - 90 | € 0,772 | € 7,72 |
| 100 - 240 | € 0,724 | € 7,24 |
| 250 - 490 | € 0,676 | € 6,76 |
| 500 + | € 0,628 | € 6,28 |
*prijsindicatie
- RS-stocknr.:
- 171-1963
- Fabrikantnummer:
- BSC070N10NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | BSC070N10NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series BSC070N10NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BSC070N10NS5 is the 100V OptiMOS 5 power MOSFET in TOLL. This MOSFET is optimized for synchronous rectification and Ideal for high switching frequency. This MOSFET have highest system efficiency and reduced switching and conduction losses.
Optimized for high performance SMPS
100% avalanche tested
Superior thermal resistance
N-channel
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