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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	130A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-220AB
	Series	IRF1407PbF
	Mount Type	Through Hole
	Pin Count	3
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	330W
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Height	16.51mm
	Width	4.83 mm
	Length	10.67mm
	Number of Elements per Chip	1

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 130A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-220AB
	Series IRF1407PbF
	Mount Type Through Hole
	Pin Count 3
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 330W
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Height 16.51mm
	Width 4.83 mm
	Length 10.67mm
	Number of Elements per Chip 1

This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Benefits:

Low RDS(on)

Dynamic dv/dt Rating

Fast Switching

175°C Operating Temperature

Target Applications:

Consumer Full-Bridge

Full-Bridge

Push-Pull

Infineon Single IRF1407PbF 1 Type N-Channel MOSFET, 130 A, 75 V Enhancement, 3-Pin TO-220AB IRF1407PBF

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