Infineon OptiMOS FD Type N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263

Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
RS-stocknr.:
166-0877
Fabrikantnummer:
IPB117N20NFDATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

OptiMOS FD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

170°C

Length

10.31mm

Width

9.45 mm

Standards/Approvals

IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS

Height

4.57mm

Automotive Standard

No

N.v.t.

Land van herkomst:
MY

Infineon OptiMOS™ FD Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Gerelateerde Links