Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70
- RS-stocknr.:
- 165-7183
- Fabrikantnummer:
- SIA517DJ-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 822,00
(excl. BTW)
€ 996,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,274 | € 822,00 |
*prijsindicatie
- RS-stocknr.:
- 165-7183
- Fabrikantnummer:
- SIA517DJ-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | TrenchFET | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Maximum Power Dissipation Pd | 6.5W | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 2.15mm | |
| Height | 0.8mm | |
| Width | 2.15 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P, Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series TrenchFET | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Maximum Power Dissipation Pd 6.5W | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 2.15mm | ||
Height 0.8mm | ||
Width 2.15 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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